PartNumber | PBSS4160PANP,115 | PBSS4160PANPSX |
Description | Bipolar Transistors - BJT 60V 1A NPN/PNP lo VCEsat transistor | Bipolar Transistors - BJT 60V 1A NPN/PNP |
Manufacturer | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | DFN-2020-6 | DFN-2020-6 |
Transistor Polarity | NPN, PNP | NPN, PNP |
Configuration | Dual | Dual |
Collector Emitter Voltage VCEO Max | 60 V | 60 V |
Collector Base Voltage VCBO | 60 V | 60 V |
Emitter Base Voltage VEBO | 7 V | 7 V |
Collector Emitter Saturation Voltage | 90 mV, - 125 mV | 90 mV, - 125 mV |
Maximum DC Collector Current | 1.5 A | 1 A, - 1 A |
Gain Bandwidth Product fT | 175 MHz, 125 MHz | 175 MHz, 125 MHz |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
DC Current Gain hFE Max | 430, 245 | - |
Packaging | Reel | Reel |
Brand | Nexperia | Nexperia |
Continuous Collector Current | 1 A | - |
DC Collector/Base Gain hfe Min | 290, 245 | 290, 170 |
Pd Power Dissipation | 1450 mW | 2 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | Transistors | Transistors |