PBSS4160DS

PBSS4160DS,115 vs PBSS4160DSH vs PBSS4160DSZ

 
PartNumberPBSS4160DS,115PBSS4160DSHPBSS4160DSZ
DescriptionBipolar Transistors - BJT LO VCESAT(BISS)TRANSBipolar Transistors - BJT 1A NPN/NPN Low VCEsat TransistorBipolar Transistors - BJT PBSS4160DS/SC-74/REEL 11" Q3/T
ManufacturerNexperiaNexperiaNexperia
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-74-6TSOP-6TSOP-6
Transistor PolarityNPNNPN-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max60 V60 V-
Collector Base Voltage VCBO80 V80 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage200 mV200 mV-
Maximum DC Collector Current2 A2 A-
Gain Bandwidth Product fT220 MHz220 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Height1 mm--
Length3.1 mm--
PackagingReelReelReel
Width1.7 mm--
BrandNexperiaNexperiaNexperia
Continuous Collector Current1 A1 A-
Pd Power Dissipation700 mW700 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
QualificationAEC-Q101AEC-Q101AEC-Q101
Factory Pack Quantity3000300010000
SubcategoryTransistorsTransistorsTransistors
Part # AliasesPBSS4160DS T/R--
Unit Weight0.000394 oz0.000705 oz-
Technology-SiSi
DC Current Gain hFE Max-500 at 1 mA, 5 V-
DC Collector/Base Gain hfe Min-250 at 1 mA, 5 V-
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
PBSS4160DS,115 Bipolar Transistors - BJT LO VCESAT(BISS)TRANS
PBSS4160DSH Bipolar Transistors - BJT 1A NPN/NPN Low VCEsat Transistor
PBSS4160DSZ Bipolar Transistors - BJT PBSS4160DS/SC-74/REEL 11" Q3/T
PBSS4160DSZ Schottky Diodes & Rectifiers PBSS4160DS/SC-74/REEL 11" Q3/T
PBSS4160DSH TRANS 2NPN 60V 0.87A SC-74
PBSS4160DS,115 TRANS 2NPN 60V 1A 6TSOP
PBSS4160DSNPN Nuevo y original
PBSS4160DS Nuevo y original
PBSS4160DS , LP2980AIM5X Nuevo y original
PBSS4160DS115 Nuevo y original
PBSS4160DS T/R Bipolar Transistors - BJT LO VCESAT(BISS)TRANS TAPE-7
PBSS4160DS(NPN) Nuevo y original
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