| PartNumber | NVTFS6H850NTAG | NVTFS6H850NWFTAG | NVTFS5C680NLWFTAG |
| Description | MOSFET TRENCH 8 80V NFET | MOSFET TRENCH 8 80V NFET | MOSFET AFSM T6 60V LL U8FL WF |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | WDFN-8 | WDFN-8 | WDFN-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | 60 V |
| Id Continuous Drain Current | 68 A | 68 A | 20 A |
| Rds On Drain Source Resistance | 8.5 mOhms | 9.5 mOhms | 22 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
| Qg Gate Charge | 19 nC | 19 nC | 2.9 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 107 W | 107 W | 20 W, 3 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Series | NVTFS6H850N | NVTFS6H850N | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 63 S | 63 S | 20 S |
| Fall Time | 8 ns | 8 ns | 23 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 32 ns | 32 ns | 25 ns |
| Factory Pack Quantity | 1500 | 1500 | 1500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34 ns | 34 ns | 13 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns | 6.5 ns |