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| PartNumber | NVMFS6H852NT1G | NVMFS6H852NWFT1G | NVMFS6H858NT1G |
| Description | MOSFET TRENCH 8 80V NFET | MOSFET TRENCH 8 80V NFET | MOSFET TRENCH 8 80V NFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DFN-5 | DFN-5 | DFN-5 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | 80 V |
| Id Continuous Drain Current | 43 A | 43 A | 32 A |
| Rds On Drain Source Resistance | 14.2 mOhms | 14.2 mOhms | 20.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 13 nC | 13 nC | 8.9 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 54 W | 54 W | 42 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 39.5 S | 39.5 S | 36 S |
| Fall Time | 6 ns | 6 ns | 13 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 24 ns | 24 ns | 17 ns |
| Factory Pack Quantity | 1500 | 1500 | 1500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 25 ns | 19 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns | 8 ns |