PartNumber | NVMFS5C430NLT1G | NVMFS5C430NAFT1G | NVMFS5C430NLT3G |
Description | MOSFET NFET SO8FL 40V 200A | MOSFET T6 40V NCH LL IN SO8FL | MOSFET NFET SO8FL 40V 200A |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-FL-8 | SO-FL-8 | SO-FL-8 |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Series | NVMFS5C430NL | - | NVMFS5C430NL |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1500 | 1500 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.003781 oz | - | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 40 V | - |
Id Continuous Drain Current | - | 185 A | - |
Rds On Drain Source Resistance | - | 1.4 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
Vgs Gate Source Voltage | - | 10 V | - |
Qg Gate Charge | - | 47 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 106 W, 3.8 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 130 S | - |
Fall Time | - | 8 ns | - |
Rise Time | - | 48 ns | - |
Typical Turn Off Delay Time | - | 29 ns | - |
Typical Turn On Delay Time | - | 13 ns | - |