PartNumber | NVMFS5C410NLWFT1G | NVMFS5C410NLWFAFT3G | NVMFS5C410NLWFAFT1G |
Description | MOSFET NFET SO8FL 40V 315A 900MO | MOSFET T6 40V HEFET | MOSFET T6 40V HEFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | - | - |
Package / Case | SO-FL-8 | - | - |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1500 | 5000 | 1500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 40 V | 40 V |
Id Continuous Drain Current | - | 330 A | 330 A |
Rds On Drain Source Resistance | - | 650 uOhms | 650 uOhms |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | 1.2 V |
Vgs Gate Source Voltage | - | 10 V | 10 V |
Qg Gate Charge | - | 143 nC | 143 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Pd Power Dissipation | - | 167 W, 3.8 W | 167 W, 3.8 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Forward Transconductance Min | - | 190 S | 190 S |
Fall Time | - | 177 ns | 177 ns |
Rise Time | - | 130 ns | 130 ns |
Typical Turn Off Delay Time | - | 66 ns | 66 ns |
Typical Turn On Delay Time | - | 20 ns | 20 ns |