NVMFS4C05

NVMFS4C05NT1G vs NVMFS4C05NT3G vs NVMFS4C05N

 
PartNumberNVMFS4C05NT1GNVMFS4C05NT3GNVMFS4C05N
DescriptionMOSFET NFET SO8FL 30V 116A 3.4MOMOSFET NFET SO8FL 30V 116A 3.4MO
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-FL-8SO-FL-8-
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current116 A127 A-
Rds On Drain Source Resistance3.4 mOhms2.3 mOhms-
QualificationAEC-Q101AEC-Q101-
PackagingReelReelReel
SeriesNVMFS4C05NNVMFS4C05NNVMFS4C05N
BrandON SemiconductorON Semiconductor-
Product TypeMOSFETMOSFET-
Factory Pack Quantity15005000-
SubcategoryMOSFETsMOSFETs-
Number of Channels-1 Channel-
Vgs th Gate Source Threshold Voltage-1.3 V-
Vgs Gate Source Voltage-20 V-
Qg Gate Charge-30 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Pd Power Dissipation-79 W-
Configuration-Single-
Channel Mode-Enhancement-
Transistor Type-1 N-Channel-
Forward Transconductance Min-68 S-
Fall Time-5 ns-
Rise Time-26 ns-
Typical Turn Off Delay Time-26 ns-
Typical Turn On Delay Time-8 ns-
Unit Weight-0.003781 oz-
Package Case--SO-8FL
Id Continuous Drain Current--116 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--3.4 mOhms
Fabricante Parte # Descripción RFQ
NVMFS4C05NT1G MOSFET NFET SO8FL 30V 116A 3.4MO
NVMFS4C05NWFT1G MOSFET NFET SO8FL 30V 116A 3.4MO
NVMFS4C05N Nuevo y original
ON Semiconductor
ON Semiconductor
NVMFS4C05NWFT3G MOSFET NFET SO8FL 30V 116A 3.4MO
NVMFS4C05NT3G MOSFET NFET SO8FL 30V 116A 3.4MO
NVMFS4C05NT1G MOSFET N-CH 30V 116A SO8FL
NVMFS4C05NWFT3G IGBT Transistors MOSFET NFET SO8FL 30V 116A 3.4MO
NVMFS4C05NT3G IGBT Transistors MOSFET NFET SO8FL 30V 116A 3.4MO
NVMFS4C05NWFT1G IGBT Transistors MOSFET NFET SO8FL 30V 116A 3.4MO
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