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| PartNumber | NVLJD4007NZTAG | NVLJD4007NZTBG | NVLJD4007NZ |
| Description | MOSFET NFET WDFN6 30V 1.4 Ohms | MOSFET NFET WDFN6 30V 7OHM | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | WDFN-6 | WDFN-6 | - |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 245 mA | 245 mA | - |
| Rds On Drain Source Resistance | 1.4 Ohms | 7 Ohms | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 750 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 755 mW | - | - |
| Configuration | Dual | Dual | Dual |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Series | NVLJD4007NZ | NVLJD4007NZ | NVLJD4007NZ |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Fall Time | 72 ns | - | 72 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 41 ns | - | 41 ns |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 96 ns | - | 96 ns |
| Typical Turn On Delay Time | 9 ns | - | 9 ns |
| Unit Weight | 0.000705 oz | - | - |
| Package Case | - | - | 6-WDFN Exposed Pad |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 6-WDFN (2x2) |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 755mW |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 20pF @ 5V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 245mA |
| Rds On Max Id Vgs | - | - | 7 Ohm @ 125mA, 4.5V |
| Vgs th Max Id | - | - | 1.5V @ 100μA |
| Gate Charge Qg Vgs | - | - | 0.75nC @ 4.5V |
| Pd Power Dissipation | - | - | 755 mW |
| Vgs Gate Source Voltage | - | - | 10 V |
| Id Continuous Drain Current | - | - | 245 mA |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 1.4 Ohms |
| Qg Gate Charge | - | - | 0.75 nC |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| NVLJD4007NZTAG | MOSFET NFET WDFN6 30V 1.4 Ohms | ||
| NVLJD4007NZTBG | MOSFET NFET WDFN6 30V 7OHM | ||
| NVLJD4007NZ | Nuevo y original | ||
ON Semiconductor |
NVLJD4007NZTAG | MOSFET 2N-CH 30V 0.245A WDFN6 | |
| NVLJD4007NZTBG | IGBT Transistors MOSFET NFET WDFN6 30V 7OHM |