NVE4

NVE4153NT1G vs NVE41393 vs NVE4153N

 
PartNumberNVE4153NT1GNVE41393NVE4153N
DescriptionMOSFET NFET SC89 20V 915MA 230MO
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSC-89-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current915 mA--
Rds On Drain Source Resistance127 mOhms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage6 V--
Qg Gate Charge1.82 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation300 mW--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
QualificationAEC-Q101--
PackagingReel-Reel
Transistor Type1 N-Channel-1 N-Channel
BrandON Semiconductor--
Forward Transconductance Min1.4 S--
Fall Time7.6 ns-7.6 ns
Product TypeMOSFET--
Rise Time4.4 ns-4.4 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns-25 ns
Typical Turn On Delay Time3.7 ns-3.7 ns
Unit Weight0.001058 oz-0.001058 oz
Package Case--SC-89-3
Pd Power Dissipation--300 mW
Vgs Gate Source Voltage--6 V
Id Continuous Drain Current--915 mA
Vds Drain Source Breakdown Voltage--20 V
Vgs th Gate Source Threshold Voltage--450 mV
Rds On Drain Source Resistance--127 mOhms
Qg Gate Charge--1.82 nC
Forward Transconductance Min--1.4 S
Fabricante Parte # Descripción RFQ
NVE4153NT1G MOSFET NFET SC89 20V 915MA 230MO
NVE41393 Nuevo y original
NVE4153N Nuevo y original
ON Semiconductor
ON Semiconductor
NVE4153NT1G IGBT Transistors MOSFET NFET SC89 20V 915MA 230MO
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