PartNumber | NVD6820NLT4G | NVD6820NLT4G-VF01 | NVD6820NLT4GP |
Description | MOSFET NFET DPAK 90V 50A 17MOHM | MOSFET NFET DPAK 90V 50A 17MOHM | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | DPAK-3 | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 90 V | 90 V | - |
Id Continuous Drain Current | 50 A | 50 A | - |
Rds On Drain Source Resistance | 16.7 mOhms | 16.7 mOhms | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | - |
Series | NVD6820NL | - | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.139332 oz | - | - |
Number of Channels | - | 1 Channel | - |
Vgs th Gate Source Threshold Voltage | - | 1.5 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 83 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 100 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Fall Time | - | 59 ns | - |
Rise Time | - | 98 ns | - |
Typical Turn Off Delay Time | - | 36 ns | - |
Typical Turn On Delay Time | - | 19 ns | - |