NVD485

NVD4856NT4G vs NVD4856NT4G-VF01 vs NVD4856N

 
PartNumberNVD4856NT4GNVD4856NT4G-VF01NVD4856N
DescriptionMOSFET NFET DPAK 25V 89A 0.0047RMOSFET NFET DPAK 25V 89A 0.0047R
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3DPAK-3-
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage25 V25 V-
Id Continuous Drain Current89 A89 A-
Rds On Drain Source Resistance4.7 mOhms4.7 mOhms-
QualificationAEC-Q101AEC-Q101-
PackagingReelReelReel
SeriesNTD4856N-NTD4856N
BrandON SemiconductorON Semiconductor-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Part # AliasesNVD4856NT4G-VF01--
Unit Weight0.139332 oz-0.139332 oz
Number of Channels-1 Channel-
Vgs th Gate Source Threshold Voltage-1.45 V-
Vgs Gate Source Voltage-20 V-
Qg Gate Charge-38 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Pd Power Dissipation-60 W-
Configuration-Single-
Channel Mode-Enhancement-
Forward Transconductance Min-73 S-
Fall Time-7.5 ns-
Rise Time-22.5 ns-
Typical Turn Off Delay Time-18.6 ns-
Typical Turn On Delay Time-15.7 ns-
Package Case--TO-252-3
Id Continuous Drain Current--89 A
Vds Drain Source Breakdown Voltage--25 V
Rds On Drain Source Resistance--4.7 mOhms
Fabricante Parte # Descripción RFQ
NVD4856NT4G MOSFET NFET DPAK 25V 89A 0.0047R
NVD4856NT4G-VF01 MOSFET NFET DPAK 25V 89A 0.0047R
NVD4856N Nuevo y original
NVD4856NT4G-VF01 Trans MOSFET N-CH 25V 89A 3-Pin DPAK T/R - Tape and Reel (Alt: NVD4856NT4G-VF01)
ON Semiconductor
ON Semiconductor
NVD4856NT4G RF Bipolar Transistors MOSFET NFET DPAK 25V 89A 0.0047R
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