PartNumber | NVD4856NT4G | NVD4856NT4G-VF01 | NVD4856N |
Description | MOSFET NFET DPAK 25V 89A 0.0047R | MOSFET NFET DPAK 25V 89A 0.0047R | |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | DPAK-3 | - |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
Id Continuous Drain Current | 89 A | 89 A | - |
Rds On Drain Source Resistance | 4.7 mOhms | 4.7 mOhms | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | Reel |
Series | NTD4856N | - | NTD4856N |
Brand | ON Semiconductor | ON Semiconductor | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | NVD4856NT4G-VF01 | - | - |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Number of Channels | - | 1 Channel | - |
Vgs th Gate Source Threshold Voltage | - | 1.45 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 38 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 60 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Forward Transconductance Min | - | 73 S | - |
Fall Time | - | 7.5 ns | - |
Rise Time | - | 22.5 ns | - |
Typical Turn Off Delay Time | - | 18.6 ns | - |
Typical Turn On Delay Time | - | 15.7 ns | - |
Package Case | - | - | TO-252-3 |
Id Continuous Drain Current | - | - | 89 A |
Vds Drain Source Breakdown Voltage | - | - | 25 V |
Rds On Drain Source Resistance | - | - | 4.7 mOhms |