PartNumber | NVD4810NT4G | NVD4810NT4G-VF01 | NVD4810NT4G-TB01 |
Description | MOSFET NFET DPAK 30V 54A 10MOHM | MOSFET NFET DPAK 30V 54A 10MOHM | MOSFET N-CH 30V 54A DPAK |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | DPAK-3 | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 54 A | 54 A | - |
Rds On Drain Source Resistance | 10 mOhms | 10 mOhms | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | - |
Series | NTD4810N | - | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.139332 oz | - | - |
Number of Channels | - | 1 Channel | - |
Vgs th Gate Source Threshold Voltage | - | 1.5 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 11 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 50 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Forward Transconductance Min | - | 9 S | - |
Fall Time | - | 2.6 ns | - |
Rise Time | - | 20.7 ns | - |
Typical Turn Off Delay Time | - | 21.8 ns | - |
Typical Turn On Delay Time | - | 7.2 ns | - |