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| PartNumber | NVD3055L170T4G-VF01 | NVD3055L170T4G | NVD3055L170 |
| Description | MOSFET NFET DPAK 60V 9A 1 70MOHM | MOSFET NFET DPAK 60V 9A 170MOHM | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DPAK-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 9 A | 9 A | - |
| Rds On Drain Source Resistance | 170 mOhms | 153 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1.7 V | - |
| Vgs Gate Source Voltage | 15 V | 15 V | - |
| Qg Gate Charge | 10 nC | 4.7 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 28.5 W | 28.5 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Fall Time | 38 ns | 38 ns | 38 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 69 ns | 69 ns | 69 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 10 ns | 10 ns | 10 ns |
| Typical Turn On Delay Time | 9.7 ns | 9.7 ns | 9.7 ns |
| Series | - | NTD3055L170 | NTD3055L170 |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Forward Transconductance Min | - | 7.3 S | - |
| Part # Aliases | - | NVD3055L170T4G-VF01 | - |
| Unit Weight | - | 0.139332 oz | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 28.5 W |
| Vgs Gate Source Voltage | - | - | 15 V |
| Id Continuous Drain Current | - | - | 9 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.7 V |
| Rds On Drain Source Resistance | - | - | 153 mOhms |
| Qg Gate Charge | - | - | 4.7 nC |
| Forward Transconductance Min | - | - | 7.3 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| NVD3055L170T4G-VF01 | MOSFET NFET DPAK 60V 9A 1 70MOHM | ||
| NVD3055L170T4G | MOSFET NFET DPAK 60V 9A 170MOHM | ||
| NVD3055L170 | Nuevo y original | ||
| NVD3055L170T4G | MOSFET N-CH 60V 9A DPAK | ||
ON Semiconductor |
NVD3055L170T4G-VF01 | MOSFET N-CH 60V 9A DPAK |