NVD3055L

NVD3055L170T4G vs NVD3055L104T4G-VF01 vs NVD3055L170

 
PartNumberNVD3055L170T4GNVD3055L104T4G-VF01NVD3055L170
DescriptionMOSFET NFET DPAK 60V 9A 170MOHMMOSFET NFET DPAK 60V SPCL TR
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance153 mOhms--
Vgs th Gate Source Threshold Voltage1.7 V--
Vgs Gate Source Voltage15 V--
Qg Gate Charge4.7 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation28.5 W--
ConfigurationSingle-Single
QualificationAEC-Q101--
PackagingReelReelReel
SeriesNTD3055L170-NTD3055L170
Transistor Type1 N-Channel-1 N-Channel
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min7.3 S--
Fall Time38 ns-38 ns
Product TypeMOSFETMOSFET-
Rise Time69 ns-69 ns
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time10 ns-10 ns
Typical Turn On Delay Time9.7 ns-9.7 ns
Part # AliasesNVD3055L170T4G-VF01--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--28.5 W
Vgs Gate Source Voltage--15 V
Id Continuous Drain Current--9 A
Vds Drain Source Breakdown Voltage--60 V
Vgs th Gate Source Threshold Voltage--1.7 V
Rds On Drain Source Resistance--153 mOhms
Qg Gate Charge--4.7 nC
Forward Transconductance Min--7.3 S
Fabricante Parte # Descripción RFQ
NVD3055L170T4G-VF01 MOSFET NFET DPAK 60V 9A 1 70MOHM
NVD3055L170T4G MOSFET NFET DPAK 60V 9A 170MOHM
NVD3055L104T4G-VF01 MOSFET NFET DPAK 60V SPCL TR
NVD3055L170 Nuevo y original
NVD3055L170T4G MOSFET N-CH 60V 9A DPAK
ON Semiconductor
ON Semiconductor
NVD3055L170T4G-VF01 MOSFET N-CH 60V 9A DPAK
NVD3055L104T4G-VF01 MOSFET N-CH 60V DPAK
Top