PartNumber | NVATS4A102PZT4G | NVATS4A101PZT4G | NVATS4A101PZ |
Description | MOSFET Power MOSFET P-Channel -30 V | MOSFET Power MOSFET P-Chann -30 V | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 44 A | 27 A | - |
Rds On Drain Source Resistance | 14 mOhms | 23 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.6 V | 2.6 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 34 nC | 18.5 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 48 W | 36 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Forward Transconductance Min | 29 S | 17 S | - |
Fall Time | 185 ns | 70 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 135 ns | 70 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 135 ns | 80 ns | - |
Typical Turn On Delay Time | 11 ns | 9.2 ns | - |
Unit Weight | 0.011993 oz | 0.011993 oz | - |