NVATS4

NVATS4A102PZT4G vs NVATS4A101PZT4G vs NVATS4A101PZ

 
PartNumberNVATS4A102PZT4GNVATS4A101PZT4GNVATS4A101PZ
DescriptionMOSFET Power MOSFET P-Channel -30 VMOSFET Power MOSFET P-Chann -30 V
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current44 A27 A-
Rds On Drain Source Resistance14 mOhms23 mOhms-
Vgs th Gate Source Threshold Voltage2.6 V2.6 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge34 nC18.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation48 W36 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
Transistor Type1 P-Channel1 P-Channel-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min29 S17 S-
Fall Time185 ns70 ns-
Product TypeMOSFETMOSFET-
Rise Time135 ns70 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time135 ns80 ns-
Typical Turn On Delay Time11 ns9.2 ns-
Unit Weight0.011993 oz0.011993 oz-
Fabricante Parte # Descripción RFQ
NVATS4A104PZT4G MOSFET Power MOSFET P-Channel -30 V
NVATS4A102PZT4G MOSFET Power MOSFET P-Channel -30 V
NVATS4A103PZT4G MOSFET Power MOSFET P-Channel -30 V
NVATS4A101PZT4G MOSFET Power MOSFET P-Chann -30 V
NVATS4A101PZ Nuevo y original
NVATS4A104PZ Nuevo y original
ON Semiconductor
ON Semiconductor
NVATS4A102PZT4G MOSFET P-CHANNEL 30V 44A ATPAK
NVATS4A103PZT4G MOSFET P-CHANNEL 30V 60A ATPAK
NVATS4A104PZT4G MOSFET P-CHANNEL 30V 82A ATPAK
NVATS4A101PZT4G MOSFET P-CHANNEL 30V 27A ATPAK
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