 |  | | |
| PartNumber | NTUD3170NZT5G | NTUD3170NZ | NTUD3170NZT5G-CUT TAPE |
| Description | MOSFET 20V Trench N-Channel | ||
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-963-6 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 220 mA | - | - |
| Rds On Drain Source Resistance | 1.5 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 125 mW | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 0.37 mm | - | - |
| Length | 1 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTUD3170NZ | NTUD3170NZ | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Type | Small Signal MOSFET | - | - |
| Width | 0.8 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 0.48 S | - | - |
| Fall Time | 80 ns | 80 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25.5 nd | 25.5 nd | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 142 ns | 142 ns | - |
| Typical Turn On Delay Time | 16.5 ns | 16.5 ns | - |
| Package Case | - | SOT-963 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-963 | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 125mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 12.5pF @ 15V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 220mA | - |
| Rds On Max Id Vgs | - | 1.5 Ohm @ 100mA, 4.5V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | 200 mW | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 220 mA | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 2.8 Ohms | - |
| Forward Transconductance Min | - | 0.48 S | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| NTUD3170NZT5G | MOSFET 20V Trench N-Channel | ||
| NTUD3174NZT5G | MOSFET NFET SOT963 20V 280MA TR | ||
| NTUD3170NZ | Nuevo y original | ||
| NTUD317NZT5G | Nuevo y original | ||
| NTUD3170NZT5G-CUT TAPE | Nuevo y original | ||
ON Semiconductor |
NTUD3171PZT5G | MOSFET 20V Trench P-Channel | |
| NTUD3170NZT5G | MOSFET 2N-CH 20V 0.22A SOT-963 | ||
| NTUD3171PZT5G | MOSFET 2P-CH 20V 0.2A SOT-963 | ||
| NTUD3174NZT5G | MOSFET 2 N-CH 20V 220MA SOT963 |