 | |  | |
| PartNumber | NTTFS4C13NTAG | NTTFS4C13NTWG | NTTFS4C13N |
| Description | MOSFET Pwr MOSFET 30V 38A 9.4mOhm SGL N-CH | MOSFET Pwr MOSFET 30V 38A 9.4mOhm SGL N-CH | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | WDFN-8 | WDFN-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 38 A | 38 A | - |
| Rds On Drain Source Resistance | 9.4 mOhms | 7.5 mOhms | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Reel | - |
| Series | NTTFS4C13N | NTTFS4C13N | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1500 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.000600 oz | 0.000600 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 1.3 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 15.2 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 21.5 W | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 40 S | - |
| Fall Time | - | 3 ns | - |
| Rise Time | - | 26 ns | - |
| Typical Turn Off Delay Time | - | 16 ns | - |
| Typical Turn On Delay Time | - | 6 ns | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| NTTFS4C13NTAG | MOSFET Pwr MOSFET 30V 38A 9.4mOhm SGL N-CH | ||
| NTTFS4C13NTWG | MOSFET Pwr MOSFET 30V 38A 9.4mOhm SGL N-CH | ||
| NTTFS4C13N | Nuevo y original | ||
ON Semiconductor |
NTTFS4C13NTAG | IGBT Transistors MOSFET Pwr MOSFET 30V 38A 9.4mOhm SGL N-CH | |
| NTTFS4C13NTWG | MOSFET N-CH 30V 38A U8FL |