NTTFS4932

NTTFS4932NTAG vs NTTFS4932NTWG vs NTTFS4932N

 
PartNumberNTTFS4932NTAGNTTFS4932NTWGNTTFS4932N
DescriptionMOSFET 30V 79A 4 mOhm Single N-Chan u8FLMOSFET 30V 79A 4 mOhm Single N-Chan u8FL
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseWDFN-8WDFN-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current79 A93 A-
Rds On Drain Source Resistance5.5 mOhms4 mOhms-
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2.2 W--
ConfigurationSingleSingleSingle
PackagingReelReelDigi-ReelR Alternate Packaging
SeriesNTTFS4932NNTTFS4932NNTTFS4932N
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandON SemiconductorON Semiconductor-
Product TypeMOSFETMOSFET-
Factory Pack Quantity15005000-
SubcategoryMOSFETsMOSFETs-
Unit Weight-0.000335 oz-
Package Case--8-PowerWDFN
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-WDFN (3.3x3.3)
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--850mW
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--3111pF @ 15V
FET Feature--Standard
Current Continuous Drain Id 25°C--11A (Ta), 79A (Tc)
Rds On Max Id Vgs--4 mOhm @ 20A, 10V
Vgs th Max Id--2.2V @ 250μA
Gate Charge Qg Vgs--46.5nC @ 10V
Pd Power Dissipation--2.2 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--79 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--5.5 mOhms
Fabricante Parte # Descripción RFQ
NTTFS4932NTAG MOSFET 30V 79A 4 mOhm Single N-Chan u8FL
NTTFS4932NTWG MOSFET 30V 79A 4 mOhm Single N-Chan u8FL
NTTFS4932N Nuevo y original
ON Semiconductor
ON Semiconductor
NTTFS4932NTAG IGBT Transistors MOSFET 30V 79A 4 mOhm Single N-Chan u8FL
NTTFS4932NTWG RF Bipolar Transistors MOSFET 30V 79A 4 mOhm Single N-Chan u8FL
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