NTRV4101PT

NTRV4101PT1G vs NTRV4101PT vs NTRV4101PT1G-CUT TAPE

 
PartNumberNTRV4101PT1GNTRV4101PTNTRV4101PT1G-CUT TAPE
DescriptionMOSFET PFET 20V 3.2A 85MO
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current2.4 A--
Rds On Drain Source Resistance210 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage1.8 V--
Qg Gate Charge7.5 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.25 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReelReel-
SeriesNTR4101PNTR4101P-
Transistor Type1 P-Channel1 P-Channel-
BrandON Semiconductor--
Forward Transconductance Min7.5 S--
Fall Time21 ns21 ns-
Product TypeMOSFET--
Rise Time12.6 ns12.6 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30.2 ns30.2 ns-
Typical Turn On Delay Time7.5 ns7.5 ns-
Unit Weight0.000282 oz0.050717 oz-
Package Case-SOT-23-3-
Pd Power Dissipation-730 mW-
Vgs Gate Source Voltage-8 V-
Id Continuous Drain Current-- 2.4 A-
Vds Drain Source Breakdown Voltage-- 20 V-
Rds On Drain Source Resistance-70 mOhms-
Qg Gate Charge-7.5 nC-
Fabricante Parte # Descripción RFQ
NTRV4101PT1G MOSFET PFET 20V 3.2A 85MO
NTRV4101PT Nuevo y original
NTRV4101PT1G-CUT TAPE Nuevo y original
ON Semiconductor
ON Semiconductor
NTRV4101PT1G MOSFET P-CH 20V 1.8A SOT-23-3
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