NTR4101PT1

NTR4101PT1G vs NTR4101PT1H

 
PartNumberNTR4101PT1GNTR4101PT1H
DescriptionMOSFET -20V -3.2A P-ChannelMOSFET PFET SOT23 20V 3.2A 85MO
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3
Number of Channels1 Channel1 Channel
Transistor PolarityP-ChannelP-Channel
Vds Drain Source Breakdown Voltage20 V20 V
Id Continuous Drain Current3.2 A3.2 A
Rds On Drain Source Resistance112 mOhms112 mOhms
Vgs Gate Source Voltage8 V8 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation730 mW730 mW
ConfigurationSingleSingle
Channel ModeEnhancement-
PackagingReelReel
Height0.94 mm-
Length2.9 mm-
ProductMOSFET Small Signal-
SeriesNTR4101PNTR4101
Transistor Type1 P-Channel1 P-Channel
TypeMOSFET-
Width1.3 mm-
BrandON SemiconductorON Semiconductor
Forward Transconductance Min7.5 S7.5 S
Fall Time12.6 ns21 ns
Product TypeMOSFETMOSFET
Rise Time12.6 ns12.6 ns
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time30.2 ns30.2 ns
Typical Turn On Delay Time7.5 ns7.5 ns
Unit Weight0.000282 oz0.000282 oz
Vgs th Gate Source Threshold Voltage-720 mV
Qg Gate Charge-7.5 nC
Fabricante Parte # Descripción RFQ
ON Semiconductor
ON Semiconductor
NTR4101PT1G MOSFET -20V -3.2A P-Channel
NTR4101PT1H MOSFET PFET SOT23 20V 3.2A 85MO
NTR4101PT1G MOSFET P-CH 20V 1.8A SOT-23
NTR4101PT1H MOSFET P-CH 20V 3.2A SOT23
NTR4101PT1 MOSFET -20V -3.2A P-Channel
NTR4101PT1G , MAX6407BS2 Nuevo y original
NTR4101PT1G-CUT TAPE Nuevo y original
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