 |  | | |
| PartNumber | NTMS4916NR2G | NTMS4916AS001 | NTMS4916N |
| Description | MOSFET NFET SO8 30V 11.4A 9MOHM | ||
| Manufacturer | ON Semiconductor | ON | ON |
| Product Category | MOSFET | IC Chips | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOIC-8 | - | - |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 11.6 A | - | - |
| Rds On Drain Source Resistance | 12 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Qg Gate Charge | 15 nC | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Packaging | Reel | - | Reel |
| Series | NTMS4916N | - | NTMS4916N |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 23 S | - | - |
| Fall Time | 15.6 ns | - | 15.6 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 7.4 ns | - | 7.4 nS |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.017870 oz | - | 0.017870 oz |
| Package Case | - | - | SO-8 |
| Pd Power Dissipation | - | - | 1.3 W |
| Id Continuous Drain Current | - | - | 11.6 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.5 V |
| Rds On Drain Source Resistance | - | - | 12 mOhms |
| Qg Gate Charge | - | - | 15 nC |
| Forward Transconductance Min | - | - | 23 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| NTMS4916NR2G | MOSFET NFET SO8 30V 11.4A 9MOHM | ||
| NTMS4916AS001 | Nuevo y original | ||
| NTMS4916N | Nuevo y original | ||
| NTMS4916UT001 | Nuevo y original | ||
| NTMS4917UT001 | Nuevo y original | ||
ON Semiconductor |
NTMS4916NR2G | MOSFET N-CH 30V 11.4A SO8FL | |
| NTMS4917NR2G | MOSFET N-CH 30V 10.2A SO8FL |