NTMFS5C46

NTMFS5C468NLT1G vs NTMFS5C460NLT3G vs NTMFS5C468NL

 
PartNumberNTMFS5C468NLT1GNTMFS5C460NLT3GNTMFS5C468NL
DescriptionMOSFET T6 40V NCH LL IN SO8MOSFET T6 40V NCH LL IN SO8
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-FL-8SO-FL-8-
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current37 A--
Rds On Drain Source Resistance17.6 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7.3 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation28 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
Transistor Type1 N-Channel-1 N-Channel
BrandON SemiconductorON Semiconductor-
Fall Time2 ns-2 ns
Product TypeMOSFETMOSFET-
Rise Time43 ns-43 ns
Factory Pack Quantity15005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time11 ns-11 ns
Typical Turn On Delay Time7 ns-7 ns
Unit Weight0.003781 oz--
Series-NTMFS5C460NL-
Package Case--DFN-5
Pd Power Dissipation--28 W
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--37 A
Vds Drain Source Breakdown Voltage--40 V
Vgs th Gate Source Threshold Voltage--1.2 V
Rds On Drain Source Resistance--17.6 mOhms
Qg Gate Charge--7.3 nC
Fabricante Parte # Descripción RFQ
NTMFS5C468NLT1G MOSFET T6 40V NCH LL IN SO8
NTMFS5C468NLT3G MOSFET T6 40V NCH LL IN SO8
NTMFS5C460NLT3G MOSFET T6 40V NCH LL IN SO8
NTMFS5C468NL Nuevo y original
ON Semiconductor
ON Semiconductor
NTMFS5C460NLT1G MOSFET T6 40V NCH LL IN SO8
NTMFS5C460NLT1G MOSFET N-CH 40V SO8FL
NTMFS5C468NLT1G MOSFET N-CH 40V SO8FL
NTMFS5C468NLT3G MOSFET N-CH 40V SO8FL
NTMFS5C460NLT3G MOSFET N-CH 40V SO8FL
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