NTMFS4899

NTMFS4899NFT1G vs NTMFS4899N vs NTMFS4899NFT3G

 
PartNumberNTMFS4899NFT1GNTMFS4899NNTMFS4899NFT3G
DescriptionMOSFET NFET SO8FL 30V 75A 5MOHMMOSFET N-Channel 30V 29.1A DFN5
ManufacturerON SemiconductorON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-FL-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current75 A--
Rds On Drain Source Resistance6 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge25 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.7 W--
ConfigurationSingleSingle Quad Drain Triple Source-
PackagingReelReel-
SeriesNTMFS4899NNTMFS4899N-
Transistor Type1 N-Channel1 N-Channel-
BrandON Semiconductor--
Forward Transconductance Min57 S--
Fall Time4.2 ns4.2 ns-
Product TypeMOSFET--
Rise Time20.3 ns20.3 ns-
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time12.6 ns12.6 ns-
Unit Weight0.005750 oz--
Package Case-SO-8FL-
Pd Power Dissipation-2.7 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-75 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-2.5 V-
Rds On Drain Source Resistance-6 mOhms-
Qg Gate Charge-25 nC-
Forward Transconductance Min-57 S-
Fabricante Parte # Descripción RFQ
NTMFS4899NFT1G MOSFET NFET SO8FL 30V 75A 5MOHM
NTMFS4899N Nuevo y original
NTMFS4899NFT3G MOSFET N-Channel 30V 29.1A DFN5
ON Semiconductor
ON Semiconductor
NTMFS4899NFT1G MOSFET N-CH 30V SO-8FL
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