 |  | | |
| PartNumber | NTLJD3115PT1G | NTLJD3115PT | NTLJD3115PT1G-CUT TAPE |
| Description | MOSFET PFET 2X2 20V 4.1A 106MOHM | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | WDFN-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 3.3 A | - | - |
| Rds On Drain Source Resistance | 106 mOhms | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.75 mm | - | - |
| Length | 2 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTLJD3115P | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Width | 2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Fall Time | 13.2 ns, 15 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 13.2 ns, 15 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13.7 ns, 19.8 ns | - | - |
| Typical Turn On Delay Time | 5.2 ns, 5.5 ns | - | - |
| Unit Weight | 0.000310 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| NTLJD3115PT1G | MOSFET PFET 2X2 20V 4.1A 106MOHM | ||
| NTLJD3115PT | Nuevo y original | ||
| NTLJD3115PT1G-CUT TAPE | Nuevo y original | ||
ON Semiconductor |
NTLJD3115PTAG | MOSFET PFET 2X2 20V 4.1A 106MOHM | |
| NTLJD3115PTAG | MOSFET 2P-CH 20V 2.3A 6-WDFN | ||
| NTLJD3115PT1G | IGBT Transistors MOSFET PFET 2X2 20V 4.1A 106MOHM |