| PartNumber | NTJD4152PT1G | NTJD4152PT1 | NTJD4152PT2G |
| Description | MOSFET 20V 0.88mA P-Channel ESD Protection | MOSFET 20V 0.88A P-Channel | MOSFET PFET SC88 20V 88MA 2 |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | N | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | SOT-363-6 | SOT-363-6 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 880 mA | 880 mA | 880 mA |
| Rds On Drain Source Resistance | 1 Ohms | 600 mOhms | 1 Ohms |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | 450 mV |
| Vgs Gate Source Voltage | 1.8 V | 12 V | 1.8 V |
| Qg Gate Charge | 2.2 nC | - | 2.2 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 272 mW | 272 mW | 350 mW |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 0.9 mm | 0.9 mm | - |
| Length | 2 mm | 2 mm | - |
| Product | MOSFET Small Signal | MOSFET Small Signal | - |
| Series | NTJD4152P | - | - |
| Transistor Type | 2 P-Channel | 2 P-Channel | 2 P-Channel |
| Type | MOSFET | MOSFET | - |
| Width | 1.25 mm | 1.25 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 3 S | 3 S | 3 S |
| Fall Time | 3.5 ns | 6.5 ns | 3.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6.5 ns | 6.5 ns | 6.5 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 13.5 ns | 13.5 ns | 13.5 ns |
| Typical Turn On Delay Time | 5.8 ns | 5.8 ns | 5.8 ns |
| Unit Weight | 0.000265 oz | 0.000265 oz | 0.000265 oz |