NTHS4101P

NTHS4101PT1G vs NTHS4101P vs NTHS4101PT1 , FLZ4V3B

 
PartNumberNTHS4101PT1GNTHS4101PNTHS4101PT1 , FLZ4V3B
DescriptionMOSFET -20V -6.7A P-Channel
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseChipFET-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current6.7 A--
Rds On Drain Source Resistance42 mOhms--
Vgs Gate Source Voltage8 V--
Pd Power Dissipation1.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.05 mm--
Length3.05 mm--
ProductMOSFET Small Signal--
SeriesNTHS4101P--
Transistor Type1 P-Channel--
TypeMOSFET--
Width1.65 mm--
BrandON Semiconductor--
Forward Transconductance Min15 S--
Fall Time28 ns--
Product TypeMOSFET--
Rise Time28 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.002998 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor
ON Semiconductor
NTHS4101PT1G MOSFET -20V -6.7A P-Channel
NTHS4101PT1G MOSFET P-CH 20V 4.8A CHIPFET
NTHS4101P Nuevo y original
NTHS4101PT1 , FLZ4V3B Nuevo y original
NTHS4101PT1G , FLZ4V7A Nuevo y original
NTHS4101PT1 MOSFET -20V -6.7A P-Channel
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