NTHD4P02FT1G

NTHD4P02FT1G vs NTHD4P02FT1G , FLZ3V3B vs NTHD4P02FT1G-

 
PartNumberNTHD4P02FT1GNTHD4P02FT1G , FLZ3V3BNTHD4P02FT1G-
DescriptionMOSFET -20V -3A P-Channel w/3A Schottky
ManufacturerON Semiconductor-ON
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseChipFET-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance200 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.05 mm--
Length3.05 mm--
ProductMOSFET Small Signal--
SeriesNTHD4P02--
Transistor Type1 P-Channel--
TypeMOSFET--
Width1.65 mm--
BrandON Semiconductor--
Forward Transconductance Min5 S--
Fall Time13 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.002998 oz--
Fabricante Parte # Descripción RFQ
NTHD4P02FT1G MOSFET -20V -3A P-Channel w/3A Schottky
NTHD4P02FT1G , FLZ3V3B Nuevo y original
NTHD4P02FT1G- Nuevo y original
NTHD4P02FT1G/C3X Nuevo y original
ON Semiconductor
ON Semiconductor
NTHD4P02FT1G Nuevo y original
Top