NTD5C4

NTD5C434NT4G vs NTD5C446NT4G vs NTD5C464NT4G

 
PartNumberNTD5C434NT4GNTD5C446NT4GNTD5C464NT4G
DescriptionMOSFET T6 40V SL IN DPAKMOSFET T6 40V SL DPAKMOSFET T6 40V SL DPAK
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseDPAK-3DPAK-3DPAK-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V40 V
Id Continuous Drain Current160 A110 A59 A
Rds On Drain Source Resistance2.1 mOhms2.9 mOhms5.8 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge80.6 nC34.3 nC20 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation120 W66 W40 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101AEC-Q101-
PackagingReelReelReel
BrandON SemiconductorON SemiconductorON Semiconductor
Forward Transconductance Min155 S100 S55 S
Fall Time14 ns17 ns5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time78 ns62 ns40 ns
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time43 ns43 ns18 ns
Typical Turn On Delay Time15 ns20 ns9 ns
Transistor Type-1 N-Channel-
Unit Weight-0.007055 oz-
Fabricante Parte # Descripción RFQ
NTD5C434NT4G MOSFET T6 40V SL IN DPAK
NTD5C446NT4G MOSFET T6 40V SL DPAK
NTD5C464NT4G MOSFET T6 40V SL DPAK
ON Semiconductor
ON Semiconductor
NTD5C446NT4G TRENCH 6 40V FET
NTD5C434NT4G T6 40V SL IN DPAK
NTD5C464NT4G T6 40V SL DPAK
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