 |  | | |
| PartNumber | NTD4970N-35G | NTD4970N | NTD4970N-1G |
| Description | MOSFET NFET DPAK 30V 38A 11MOHM | MOSFET NFET DPAK 30V 38A 11MOHM | |
| Manufacturer | ON Semiconductor | O | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 11.6 A | - | - |
| Rds On Drain Source Resistance | 21 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Qg Gate Charge | 8.2 nC | - | - |
| Pd Power Dissipation | 2.55 W | - | - |
| Configuration | Single | Single | - |
| Packaging | Tube | Tube | - |
| Series | NTD4970N | NTD4970N | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 34 S | - | - |
| Fall Time | 5.7 ns | 5.7 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 27.6 ns | 27.6 ns | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Package Case | - | IPAK-3 | - |
| Pd Power Dissipation | - | 2.55 W | - |
| Id Continuous Drain Current | - | 11.6 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Rds On Drain Source Resistance | - | 21 mOhms | - |
| Qg Gate Charge | - | 8.2 nC | - |
| Forward Transconductance Min | - | 34 S | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| NTD4970N-35G | MOSFET NFET DPAK 30V 38A 11MOHM | ||
| NTD4970N | Nuevo y original | ||
| NTD4970N-1G | MOSFET NFET DPAK 30V 38A 11MOHM | ||
ON Semiconductor |
NTD4970NT4G | MOSFET NFET DPAK 30V 38A 11MOHM | |
| NTD4970NT4G | MOSFET N-CH 30V 38A DPAK | ||
| NTD4970N-35G | MOSFET N-CH 30V 38A IPAK |