NTD4909N

NTD4909NA-35G vs NTD4909N-1G vs NTD4909N-35G

 
PartNumberNTD4909NA-35GNTD4909N-1GNTD4909N-35G
DescriptionMOSFET NFET DPAK 30V 41A 8 mOhmMOSFET NFET DPAK 30V 41A 8.0 mOhmMOSFET NFET DPAK 30V 41A 8.0 mOhm
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTThrough Hole
Package / CaseTO-252-3TO-252-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current41 A41 A12.1 A
Rds On Drain Source Resistance8 mOhms12 mOhms8 mOhms
ConfigurationSingleSingleSingle
PackagingTube--
SeriesNTD4909NA-35G-NTD4909N
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandON SemiconductorON SemiconductorON Semiconductor
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity757575
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Vgs Gate Source Voltage-20 V20 V
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 175 C+ 175 C
Pd Power Dissipation-2.6 W2.6 W
Qg Gate Charge--17.5 nC
Fall Time--2.3 ns
Rise Time--19 ns
Typical Turn Off Delay Time--21 ns
Typical Turn On Delay Time--8 ns
Fabricante Parte # Descripción RFQ
ON Semiconductor
ON Semiconductor
NTD4909NT4G MOSFET NFET DPAK 30V 41A 8.0 mOhm
NTD4909NA-35G MOSFET NFET DPAK 30V 41A 8 mOhm
NTD4909N-1G MOSFET NFET DPAK 30V 41A 8.0 mOhm
NTD4909N-35G MOSFET NFET DPAK 30V 41A 8.0 mOhm
NTD4909NAT4G MOSFET NFET DPAK 30V 41A 8.0MO
NTD4909N-1G MOSFET N-CH 30V 41A SGL IPAK
NTD4909NAT4G MOSFET N-CH 30V 41A SGL DPAK
NTD4909NT4G MOSFET N-CH 30V 8.8A SGL DPAK
NTD4909N-35G IGBT Transistors MOSFET NFET DPAK 30V 41A 8.0 mOhm
NTD4909NA-35G TRANS MOSFET N-CH 30V 12.1A 3-PIN(3+TAB) IPAK RAIL
NTD4909N Nuevo y original
NTD4909NAT4H Nuevo y original
NTD4909NT4H Nuevo y original
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