 |  |  | |
| PartNumber | NTD4808N-1G | NTD4808 | NTD4808N-35G |
| Description | MOSFET NFET 30V 63A 8MOHM | MOSFET N-CH 30V 9.8A IPAK | |
| Manufacturer | ON Semiconductor | ON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | IPAK-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 8 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 6.35 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | NTD4808N | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | FETs - MOSFETs | - | - |
| Width | 2.38 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 11.4 S | - | - |
| Fall Time | 5.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 102 ns | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| NTD4808N-1G | MOSFET NFET 30V 63A 8MOHM | ||
| NTD4808 | Nuevo y original | ||
| NTD4808NT1G | Nuevo y original | ||
ON Semiconductor |
NTD4808NT4G | MOSFET NFET 30V 63A 8MOHM | |
| NTD4808N-35G | MOSFET N-CH 30V 9.8A IPAK | ||
| NTD4808NT4G | MOSFET N-CH 30V 9.8A DPAK | ||
| NTD4808N-1G | IGBT Transistors MOSFET NFET 30V 63A 8MOHM |