NTD2955T

NTD2955T4G vs NTD2955T vs NTD2955T4

 
PartNumberNTD2955T4GNTD2955TNTD2955T4
DescriptionMOSFET -60V -12A P-ChannelMOSFET -60V -12A P-Channel
ManufacturerON SemiconductorONSONS
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-4--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance180 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation55 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Height2.38 mm--
Length6.73 mm--
SeriesNTD2955NTD2955NTD2955
Transistor Type1 P-Channel1 P-Channel1 P-Channel
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor--
Forward Transconductance Min8 S--
Fall Time48 ns48 ns48 ns
Product TypeMOSFET--
Rise Time45 ns45 ns45 ns
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns26 ns26 ns
Typical Turn On Delay Time10 ns10 ns10 ns
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case-TO-252-3TO-252-3
Pd Power Dissipation-55 W55 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-- 12 A- 12 A
Vds Drain Source Breakdown Voltage-- 60 V- 60 V
Rds On Drain Source Resistance-155 mOhms155 mOhms
Forward Transconductance Min-8 S8 S
Fabricante Parte # Descripción RFQ
NTD2955T4G MOSFET -60V -12A P-Channel
NTD2955T Nuevo y original
NTD2955T4 MOSFET -60V -12A P-Channel
NTD2955T4G , MMBT4258 Nuevo y original
NTD2955T4G-CUT TAPE Nuevo y original
ON Semiconductor
ON Semiconductor
NTD2955T4G MOSFET P-CH 60V 12A DPAK
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