NTD110N02RT

NTD110N02RT4G vs NTD110N02RT4 vs NTD110N02RT4G-001

 
PartNumberNTD110N02RT4GNTD110N02RT4NTD110N02RT4G-001
DescriptionMOSFET 24V 110A N-ChannelMOSFET 24V 110A N-Channel
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage24 V24 V-
Id Continuous Drain Current110 A110 A-
Rds On Drain Source Resistance4.1 mOhms4.1 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation2.88 W2.88 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.38 mm2.38 mm-
Length6.73 mm6.73 mm-
SeriesNTD110N02R--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width6.22 mm6.22 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min44 S44 S-
Fall Time21 ns21 ns-
Product TypeMOSFETMOSFET-
Rise Time39 ns39 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time27 ns27 ns-
Typical Turn On Delay Time11 ns11 ns-
Unit Weight0.139332 oz0.139332 oz-
Fabricante Parte # Descripción RFQ
NTD110N02RT4G MOSFET 24V 110A N-Channel
NTD110N02RT4G-001 Nuevo y original
NTD110N02RT4G-CUT TAPE Nuevo y original
ON Semiconductor
ON Semiconductor
NTD110N02RT4 MOSFET 24V 110A N-Channel
NTD110N02RT4 MOSFET N-CH 24V 12.5A DPAK
NTD110N02RT4G MOSFET N-CH 24V 12.5A DPAK
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