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| PartNumber | NSVMMBT5401WT1G | NSVMMBT5401LT3G | NSVMMBT5401LT1G |
| Description | Bipolar Transistors - BJT PNP HIGH VOLTAGE TRA | Bipolar Transistors - BJT SS SOT23 HV XSTR PNP 150V | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SC-70-3 | SOT-23-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | - 150 V | - 150 V | - |
| Collector Base Voltage VCBO | - 160 V | - 160 V | - |
| Emitter Base Voltage VEBO | - 5 V | - 5 V | - |
| Collector Emitter Saturation Voltage | - 0.5 V | - 0.5 V | - |
| Gain Bandwidth Product fT | 300 MHz | 300 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | MMBT5401W | MMBT5401L | - |
| DC Current Gain hFE Max | 200 | 240 | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | - 500 mA | - 500 mA | - |
| DC Collector/Base Gain hfe Min | 40 | 60 | - |
| Pd Power Dissipation | 400 mW | 225 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000212 oz | 0.000282 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| NSVMMBT5401WT1G | Bipolar Transistors - BJT PNP HIGH VOLTAGE TRA | ||
| NSVMMBT5401LT3G | Bipolar Transistors - BJT SS SOT23 HV XSTR PNP 150V | ||
| NSVMMBT5401LT1G | Nuevo y original | ||
ON Semiconductor |
NSVMMBT5401LT3G | Bipolar Transistors - BJT SS SOT23 HV XSTR PNP 150V | |
| NSVMMBT5401WT1G | TRANS PNP BIPO 150V SC70-3 |