PartNumber | NSV60600MZ4T1G | NSV60600MZ4T3G | NSV60600MZ4T1G/3G |
Description | Bipolar Transistors - BJT PNP LOW VCE(SAT) | Bipolar Transistors - BJT PNP LOW VCE(SAT) | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-223-4 | SOT-223-4 | - |
Transistor Polarity | PNP | PNP | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | - 60 V | - 60 V | - |
Collector Base Voltage VCBO | - 100 V | - 100 V | - |
Emitter Base Voltage VEBO | - 6 V | - 6 V | - |
Collector Emitter Saturation Voltage | - 0.1 V | - 50 mV | - |
Maximum DC Collector Current | - 12 A | - 12 A | - |
Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | NSS60600 | NSS60600 | - |
DC Current Gain hFE Max | 360 at - 1 A, - 2 V | 360 | - |
Packaging | Reel | Reel | - |
Brand | ON Semiconductor | ON Semiconductor | - |
DC Collector/Base Gain hfe Min | 120 | 120 | - |
Pd Power Dissipation | 2 W | 710 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Factory Pack Quantity | 1000 | 4000 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.003951 oz | 0.003880 oz | - |
Continuous Collector Current | - | - 6 A | - |