PartNumber | NSV60201LT1G | NSV60200SMTWTBG | NSV60200DMTWTBG |
Description | Bipolar Transistors - BJT 60V NPN LOW VCE(SAT) XTR | Bipolar Transistors - BJT 60V SINGLE 2A LOWVC E(SAT) | Bipolar Transistors - BJT DUAL 60V 2A LOWVCES AT PNP |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | WDFN-6 | WDFN-6 |
Transistor Polarity | NPN | PNP | PNP |
Collector Emitter Voltage VCEO Max | 60 V | - 60 V | - 60 V |
Emitter Base Voltage VEBO | 8 V | - 6 V | - 6 V |
Series | NSS60201LT1G | - | - |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Continuous Collector Current | 2 A | 2 A | 2 A |
Pd Power Dissipation | 460 mW | 1.8 W | 1.8 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000282 oz | - | - |
Configuration | - | Single | Dual |
Collector Base Voltage VCBO | - | - 60 V | - 60 V |
Collector Emitter Saturation Voltage | - | - 0.365 V | - 0.365 V |
Gain Bandwidth Product fT | - | 155 MHz | 155 MHz |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
DC Collector/Base Gain hfe Min | - | 150 | 150 |