PartNumber | NSV60100DMTWTBG | NSV60101DMTWTBG | NSV60101DMR6T1G |
Description | Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA | Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA | Bipolar Transistors - BJT 60V, 1A DUAL NPN LOW VCE( |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Series | NSS60100DMT | NSS60101DMT | - |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Technology | - | Si | - |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | WDFN-6 | SC-74-6 |
Transistor Polarity | - | NPN | NPN |
Configuration | - | Dual | Dual |
Collector Emitter Voltage VCEO Max | - | 60 V | 60 V |
Collector Base Voltage VCBO | - | 60 V | 60 V |
Emitter Base Voltage VEBO | - | 6 V | 6 V |
Collector Emitter Saturation Voltage | - | 0.2 V | 0.143 V |
Gain Bandwidth Product fT | - | 180 MHz | 200 MHz |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
DC Current Gain hFE Max | - | 250 | 295 |
Continuous Collector Current | - | 1 A | - |
DC Collector/Base Gain hfe Min | - | 150 | 100 |
Pd Power Dissipation | - | 2.27 W | 0.53 W |
Unit Weight | - | 0.000600 oz | - |
Maximum DC Collector Current | - | - | 1 A |