PartNumber | NSV20200LT1G | NSV20200DMTWTBG | NSV20201DMTWTBG |
Description | Bipolar Transistors - BJT 20V PNP LOW VCE(SAT) XTR | Bipolar Transistors - BJT 20V DUAL LOW VCE(SA T) FOR | Bipolar Transistors - BJT 20V DUAL LOW VCE(SA T) FOR |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | - | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | WDFN-6 | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | Dual | Dual |
Collector Emitter Voltage VCEO Max | 20 V | 20 V | - |
Collector Base Voltage VCBO | 20 V | 20 V | - |
Emitter Base Voltage VEBO | 7 V | - | - |
Collector Emitter Saturation Voltage | - 0.18 V | 0.25 V | - |
Gain Bandwidth Product fT | 100 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | NSS20200L | - | - |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Continuous Collector Current | 2 A | - | - |
DC Collector/Base Gain hfe Min | 150 | 220 | - |
Pd Power Dissipation | 460 mW | - | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000282 oz | - | - |