 |  |  | |
| PartNumber | NSL12AWT1G | NSL12AWT1 | NSL12AWT1 , FES1G |
| Description | Bipolar Transistors - BJT 3A 12V Switching PNP | TRANS PNP 12V 2A SOT363 | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 12 V | - | - |
| Collector Base Voltage VCBO | - 12 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | - 170 mV | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | NSL12AW | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.25 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 2 A | - | - |
| Pd Power Dissipation | 450 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000988 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| NSL12AWT1G | Bipolar Transistors - BJT 3A 12V Switching PNP | ||
| NSL12AWT1 , FES1G | Nuevo y original | ||
| NSL12AWT1G , FES1JA | Nuevo y original | ||
ON Semiconductor |
NSL12AWT1 | TRANS PNP 12V 2A SOT363 | |
| NSL12AWT1G | Bipolar Transistors - BJT 3A 12V Switching PNP |