NSBC123E

NSBC123EDXV6T1G vs NSBC123EF3T5G vs NSBC123EDXV6T1

 
PartNumberNSBC123EDXV6T1GNSBC123EF3T5GNSBC123EDXV6T1
DescriptionBipolar Transistors - Pre-Biased 100mA 50V Dual NPNBipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (BTRANS 2NPN PREBIAS 0.5W SOT563
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYY-
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor2.2 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSOT-563-6--
DC Collector/Base Gain hfe Min8--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation357 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNSBC123EDXV6NSBC123EF3-
PackagingReelReel-
DC Current Gain hFE Max8--
Height0.55 mm--
Length1.6 mm--
Width1.2 mm--
BrandON SemiconductorON Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity40008000-
SubcategoryTransistorsTransistors-
Unit Weight0.000106 oz--
Fabricante Parte # Descripción RFQ
NSBC123EDXV6T1G Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
NSBC123EPDXV6T1G Bipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
NSBC123EF3T5G Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
ON Semiconductor
ON Semiconductor
NSBC123EPDXV6T1 Bipolar Transistors - Pre-Biased 100mA Complementary
NSBC123EDXV6T1 TRANS 2NPN PREBIAS 0.5W SOT563
NSBC123EDXV6T1G TRANS 2NPN PREBIAS 0.5W SOT563
NSBC123EPDXV6T1 TRANS PREBIAS NPN/PNP SOT563
NSBC123EF3T5G Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
NSBC123EPDXV6T1G Bipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
Top