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| PartNumber | NSBA114TDP6T5G | NSBA114TDXV6T5G | NSBA114TDXV6T1G |
| Description | Bipolar Transistors - Pre-Biased DUAL PBRT | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Series | NSBA114TDP6 | NSBA114TDXV6 | NSBA114TDXV6 |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 8000 | 8000 | 4000 |
| Subcategory | Transistors | Transistors | Transistors |
| Configuration | - | Dual | Dual |
| Transistor Polarity | - | PNP | PNP |
| Typical Input Resistor | - | 10 kOhms | 10 kOhms |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | SOT-563-6 | SOT-563-6 |
| DC Collector/Base Gain hfe Min | - | 160 | 160 |
| Collector Emitter Voltage VCEO Max | - | 50 V | 50 V |
| Continuous Collector Current | - | - 0.1 A | - 0.1 A |
| Peak DC Collector Current | - | 100 mA | 100 mA |
| Pd Power Dissipation | - | 357 mW | 357 mW |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| DC Current Gain hFE Max | - | 160 | 160 |
| Height | - | 0.55 mm | 0.55 mm |
| Length | - | 1.6 mm | 1.6 mm |
| Width | - | 1.2 mm | 1.2 mm |
| Unit Weight | - | 0.000106 oz | 0.000106 oz |