NSBA114EDX

NSBA114EDXV6T1G vs NSBA114EDXV6T5 vs NSBA114EDXV6T1

 
PartNumberNSBA114EDXV6T1GNSBA114EDXV6T5NSBA114EDXV6T1
DescriptionBipolar Transistors - Pre-Biased 100mA 50V Dual PNPBipolar Transistors - Pre-Biased 100mA 50V Dual PNPBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYN-
ConfigurationDualDual-
Transistor PolarityPNPPNP-
Typical Input Resistor10 kOhms10 kOhms-
Typical Resistor Ratio11-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563-6SOT-563-6-
DC Collector/Base Gain hfe Min3535-
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current- 0.1 A- 0.1 A-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation357 mW357 mW-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesNSBA114EDXV6--
PackagingReelReel-
DC Current Gain hFE Max3535-
Height0.55 mm0.55 mm-
Length1.6 mm1.6 mm-
Width1.2 mm1.2 mm-
BrandON SemiconductorON Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity4000--
SubcategoryTransistorsTransistors-
Unit Weight0.000106 oz0.000106 oz-
Fabricante Parte # Descripción RFQ
NSBA114EDXV6T1G Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA114EDXV6T1 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
ON Semiconductor
ON Semiconductor
NSBA114EDXV6T5 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA114EDXV6T5 TRANS 2PNP PREBIAS 0.5W SOT563
NSBA114EDXV6T5G TRANS 2PNP PREBIAS 0.5W SOT563
NSBA114EDXV6T1G Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
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