 |  |  | |
| PartNumber | NJVMJD42CT4G | NJVMJD42CT4G-VF01 | NJVMJD42CT4G/MJD41C |
| Description | Bipolar Transistors - BJT SILICON Pwr TRANSISTOR | TRANS PNP 100V 6A DPAK-4 | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DPAK-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 6 A | - | - |
| Gain Bandwidth Product fT | 3 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MJD42C | - | - |
| DC Current Gain hFE Max | 30 at 300 mA, 4 V | - | - |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Packaging | Reel | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor | - | - |
| DC Collector/Base Gain hfe Min | 30 | - | - |
| Pd Power Dissipation | 1750 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | NJVMJD42CT4G-VF01 | - | - |
| Unit Weight | 0.012346 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| NJVMJD42CT4G | Bipolar Transistors - BJT SILICON Pwr TRANSISTOR | ||
| NJVMJD42CT4G/MJD41C | Nuevo y original | ||
| NJVMJD42CT4G | Bipolar Transistors - BJT SILICON Pwr TRANSISTOR | ||
ON Semiconductor |
NJVMJD42CT4G-VF01 | TRANS PNP 100V 6A DPAK-4 |