NJVMJD32

NJVMJD32CG vs NJVMJD32CT4G vs NJVMJD32CT4G/MJD31C

 
PartNumberNJVMJD32CGNJVMJD32CT4GNJVMJD32CT4G/MJD31C
DescriptionBipolar Transistors - BJT BIP DPAK PNP 3A 100VDarlington Transistors BIP DPAK PNP 3A 100V TR
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTDarlington Transistors-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDPAK-3DPAK-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 100 V100 V-
Collector Base Voltage VCBO- 100 V100 V-
Emitter Base Voltage VEBO- 5 V5 V-
Collector Emitter Saturation Voltage1.2 V--
Maximum DC Collector Current5 A--
Gain Bandwidth Product fT3 MHz3 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJD32CMJD32C-
PackagingTubeReel-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current3 A3 A-
Pd Power Dissipation15 W15 W-
Product TypeBJTs - Bipolar TransistorsDarlington Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity752500-
SubcategoryTransistorsTransistors-
Unit Weight0.012381 oz0.009185 oz-
Maximum Collector Cut off Current-50 uA-
DC Collector/Base Gain hfe Min-25-
Part # Aliases-NJVMJD32CT4G-VF01-
Fabricante Parte # Descripción RFQ
NJVMJD32T4G Bipolar Transistors - BJT BIP DPAK PNP 3A 40V TR
NJVMJD32CG Bipolar Transistors - BJT BIP DPAK PNP 3A 100V
NJVMJD32CT4G Darlington Transistors BIP DPAK PNP 3A 100V TR
NJVMJD32CT4G/MJD31C Nuevo y original
NJVMJD32CT4G Darlington Transistors BIP DPAK PNP 3A 100V TR
ON Semiconductor
ON Semiconductor
NJVMJD32CT4G-VF01 TRANS PNP 100V 3A DPAK
NJVMJD32T4G Bipolar Transistors - BJT BIP DPAK PNP 3A 40V TR
NJVMJD32CG Bipolar Transistors - BJT BIP DPAK PNP 3A 100V
Top