NJVMJB

NJVMJB42CT4G vs NJVMJB41CT4G vs NJVMJB41C

 
PartNumberNJVMJB42CT4GNJVMJB41CT4GNJVMJB41C
DescriptionBipolar Transistors - BJT BIP PNP 6A 100V TRBipolar Transistors - BJT BIP NPN 6A 100V TR
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseD2PAK-3D2PAK-3-
Transistor PolarityPNPNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 100 V100 V-
Collector Base Voltage VCBO- 100 V100 V-
Emitter Base Voltage VEBO- 5 V5 V-
Collector Emitter Saturation Voltage- 1.5 V1.5 V-
Maximum DC Collector Current- 10 A6 A-
Gain Bandwidth Product fT3 MHz3 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJB42CMJB41C-
DC Current Gain hFE Max7575 at 3 A, 4 V-
PackagingReelReel-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current- 6 A--
DC Collector/Base Gain hfe Min1520 at 500 mA, 10 V-
Pd Power Dissipation65 W65 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity800800-
SubcategoryTransistorsTransistors-
Unit Weight0.050089 oz0.079014 oz-
Technology-Si-
Fabricante Parte # Descripción RFQ
NJVMJB42CT4G Bipolar Transistors - BJT BIP PNP 6A 100V TR
NJVMJB41CT4G Bipolar Transistors - BJT BIP NPN 6A 100V TR
NJVMJB45H11T4G Bipolar Transistors - BJT BIP PNP 8A 80V TR
NJVMJB44H11T4G Bipolar Transistors - BJT BIP NPN 8A 80V TR
NJVMJB41C Nuevo y original
ON Semiconductor
ON Semiconductor
NJVMJB44H11T4G Bipolar Transistors - BJT BIP NPN 8A 80V TR
NJVMJB42CT4G Bipolar Transistors - BJT BIP PNP 6A 100V TR
NJVMJB45H11T4G Bipolar Transistors - BJT BIP PNP 8A 80V TR
NJVMJB41CT4G Bipolar Transistors - BJT BIP NPN 6A 100V TR
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