NID6002N

NID6002NT4G vs NID6002N vs NID6002NT4

 
PartNumberNID6002NT4GNID6002NNID6002NT4
DescriptionMOSFET NFET 60V HD+IC FET SGL N-CH 6.5A 65V DPAK
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage70 V--
Id Continuous Drain Current6.5 A--
Rds On Drain Source Resistance210 mOhms--
Vgs Gate Source Voltage14 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.38 mm--
Length6.73 mm--
SeriesNID6002N--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandON Semiconductor--
Fall Time660 ns--
Product TypeMOSFET--
Rise Time250 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time840 ns--
Typical Turn On Delay Time96 ns--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor
ON Semiconductor
NID6002NT4G MOSFET NFET 60V HD+
NID6002NT4G IGBT Transistors MOSFET NFET 60V HD+
NID6002NT4 IC FET SGL N-CH 6.5A 65V DPAK
NID6002N Nuevo y original
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