NIC9

NIC9N05ATS1 vs NIC9N05ACLF vs NIC9001

 
PartNumberNIC9N05ATS1NIC9N05ACLFNIC9001
DescriptionMOSFET 9 A 52 V N-CHANNEL DIEIGBT Transistors MOSFET DIE / WAFER
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDIE--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage59 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance90 mOhms--
Pd Power Dissipation1.74 W--
ConfigurationSingle--
QualificationAEC-Q101--
PackagingBulk--
Transistor Type1 N-Channel--
BrandON Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity3500--
SubcategoryMOSFETs--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
NIC9N05ATS1 MOSFET 9 A 52 V N-CHANNEL DIE
NIC9N05ACLF IGBT Transistors MOSFET DIE / WAFER
NIC9N05ATS1 RF Bipolar Transistors MOSFET 9 A 52 V N-CHANNEL DIE
NIC9001 Nuevo y original
ON Semiconductor
ON Semiconductor
NIC9N05TS1 MOSFET NFET DIE CLAMPEDFET 55V
NIC9N05TS1 MOSFET NFET DIE CLAMPEDFET 55V
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