PartNumber | NGTB40N120FL2WG | NGTB40N120FL2WAG | NGTB40N120FL2WG PB-FREE |
Description | IGBT Transistors 1200V/40A FAST IGBT FSII | IGBT Transistors 1200V/40 FAST IGBT FSII T | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-247 | TO-247-4 | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
Collector Emitter Saturation Voltage | 2 V | - | - |
Maximum Gate Emitter Voltage | 30 V | 30 V | - |
Continuous Collector Current at 25 C | 80 A | 160 A | - |
Pd Power Dissipation | 535 W | 268 W | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Series | NGTB40N120FL2 | - | - |
Packaging | Tube | Tube | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Gate Emitter Leakage Current | 200 nA | 200 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 30 | 30 | - |
Subcategory | IGBTs | IGBTs | - |
Unit Weight | 0.229281 oz | 0.211644 oz | - |
Continuous Collector Current Ic Max | - | 160 A | - |
Height | - | 21 mm | - |
Length | - | 16.13 mm | - |
Operating Temperature Range | - | - 55 c to + 175 C | - |
Width | - | 5.21 mm | - |
Continuous Collector Current | - | 40 A | - |