NGTB10

NGTB10N60R2DT4G vs NGTB10N60FG vs NGTB10B60R2DT4G

 
PartNumberNGTB10N60R2DT4GNGTB10N60FGNGTB10B60R2DT4G
DescriptionIGBT Transistors RC2 IGBT 10A 600V DPAKIGBT Transistors NCH IGBT 10A 600V TO220F3
ManufacturerON SemiconductorON Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C20 A--
Pd Power Dissipation72 W--
Maximum Operating Temperature+ 175 C--
PackagingReelTube-
Continuous Collector Current Ic Max10 A--
BrandON SemiconductorON Semiconductor-
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity250050-
SubcategoryIGBTsIGBTs-
Unit Weight0.012346 oz--
Series-NGTB10N60FG-
Fabricante Parte # Descripción RFQ
NGTB10N60R2DT4G IGBT Transistors RC2 IGBT 10A 600V DPAK
NGTB10N60FG IGBT Transistors NCH IGBT 10A 600V TO220F3
NGTB10B60R2DT4G Nuevo y original
ON Semiconductor
ON Semiconductor
NGTB10N60FG IGBT Transistors NCH IGBT 10A 600V TO220F3
NGTB10N60R2DT4G IGBT 10A 600V DPAK
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