NGTB0

NGTB03N60R2DT4G vs NGTB05N vs NGTB05N60R2

 
PartNumberNGTB03N60R2DT4GNGTB05NNGTB05N60R2
DescriptionIGBT Transistors RC2 IGBT 3A 600V DPAK
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C9 A--
Pd Power Dissipation49 W--
Maximum Operating Temperature+ 175 C--
PackagingReel--
Continuous Collector Current Ic Max4.5 A--
BrandON Semiconductor--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity2500--
SubcategoryIGBTs--
Unit Weight0.012346 oz--
Fabricante Parte # Descripción RFQ
NGTB03N60R2DT4G IGBT Transistors RC2 IGBT 3A 600V DPAK
NGTB05N60R2DT4G IGBT Transistors RC2 IGBT 5A 600V DPAK
NGTB05N Nuevo y original
NGTB05N60R2 Nuevo y original
ON Semiconductor
ON Semiconductor
NGTB03N60R2DT4G IGBT 9A 600V DPAK
NGTB05N60R2DT4G IGBT 5A 600V DPAK
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